onsemi FGAF40N60SMD IGBT, 80 A 600 V, 3-Pin TO-3PF, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

£8.40

(exc. VAT)

£10.08

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 208 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18£4.20£8.40
20 +£3.62£7.24

*price indicative

Packaging Options:
RS Stock No.:
807-0763
Mfr. Part No.:
FGAF40N60SMD
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

115 W

Package Type

TO-3PF

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.7 x 3.2 x 26.7mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Discrete IGBTs, Fairchild Semiconductor



IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links