onsemi, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

Subtotal (1 tube of 360 units)*

£291.60

(exc. VAT)

£349.20

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 360 unit(s), ready to ship
Units
Per unit
Per Tube*
360 +£0.81£291.60

*price indicative

RS Stock No.:
185-7999
Mfr. Part No.:
FGAF40S65AQ
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Maximum Continuous Collector Current Ic

80A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

94W

Package Type

TO-3PF

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.6V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free and is RoHS

Length

19.1mm

Width

15.3 mm

Series

Trench

Energy Rating

325mJ

Automotive Standard

No

Non Compliant

COO (Country of Origin):
KR
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial applications.

Maximum junction temperature : TJ = 175°C

Positive temperaure co-efficient for easy parallel operating

High current capability

Low saturation voltage: VCE(sat) = 1.6V(Typ.) @ IC = 40A

High input impedance

100% of the Parts tested for ILM

Fast switching

Tightened parameter distribution

IGBT with monolithic reverse conducting diode

Applications

Consumer Appliances

PFC, Welder

Industrial application

Related links