onsemi NGTG15N60S1EG IGBT, 30 A 600 V, 4-Pin TO-220, Through Hole

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onsemi FGP3040G2_F085 IGBT, 41 A 400 V, 3-Pin TO-220, Through Hole
RS Stock No.
864-8899

Each (In a Pack of 5)

£1.454

(exc. VAT)

£1.745

(inc. VAT)

RS Stock No.:
769-5810
Mfr. Part No.:
NGTG15N60S1EG
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

117 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

Dimensions

10.28 x 4.82 x 15.75mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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