- RS Stock No.:
- 261-5072
- Mfr. Part No.:
- STGWA80H65DFBAG
- Brand:
- STMicroelectronics
2 In stock - FREE next working day delivery available
Added
Price Each
£5.30
(exc. VAT)
£6.36
(inc. VAT)
Units | Per unit |
1 - 4 | £5.30 |
5 - 9 | £5.03 |
10 - 14 | £4.78 |
15 - 19 | £4.54 |
20 + | £4.33 |
- RS Stock No.:
- 261-5072
- Mfr. Part No.:
- STGWA80H65DFBAG
- Brand:
- STMicroelectronics
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
Specifications
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 80 A |
Maximum Collector Emitter Voltage | 1.65 V |
Maximum Gate Emitter Voltage | 20V |
Maximum Power Dissipation | 535 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
- RS Stock No.:
- 261-5072
- Mfr. Part No.:
- STGWA80H65DFBAG
- Brand:
- STMicroelectronics
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