STMicroelectronics STGWA80H65DFBAG IGBT, 80 A 1.65 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

£116.16

(exc. VAT)

£139.38

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30£3.872£116.16
60 - 60£3.772£113.16
90 +£3.679£110.37

*price indicative

RS Stock No.:
261-5071
Mfr. Part No.:
STGWA80H65DFBAG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

1.65 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

535 W

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode

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