STMicroelectronics STGW40H65DFB IGBT, 40 A 650 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 pack of 2 units)*

£6.02

(exc. VAT)

£7.22

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 42 unit(s) ready to ship
  • Plus 30 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 8£3.01£6.02
10 - 98£2.935£5.87
100 - 498£2.855£5.71
500 +£2.785£5.57

*price indicative

Packaging Options:
RS Stock No.:
792-5795
Mfr. Part No.:
STGW40H65DFB
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

283 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links