Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7

Subtotal (1 reel of 1000 units)*

£1,680.00

(exc. VAT)

£2,020.00

(inc. VAT)

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  • 999,999,000 unit(s) shipping from 19 March 2026
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Units
Per unit
Per Reel*
1000 +£1.68£1,680.00

*price indicative

RS Stock No.:
258-3756
Mfr. Part No.:
IMBG120R350M1HXTMA1
Brand:
Infineon
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Brand

Infineon

Package Type

PG-TO263-7

The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density


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