Infineon IPF N-Channel MOSFET, 254 A, 120 V, 7-Pin PG-TO263-7 IPF019N12NM6ATMA1
- RS Stock No.:
- 349-402
- Mfr. Part No.:
- IPF019N12NM6ATMA1
- Brand:
- Infineon
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 349-402
- Mfr. Part No.:
- IPF019N12NM6ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 254 A | |
| Maximum Drain Source Voltage | 120 V | |
| Series | IPF | |
| Package Type | PG-TO263-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 254 A | ||
Maximum Drain Source Voltage 120 V | ||
Series IPF | ||
Package Type PG-TO263-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Optimized for high frequency switching
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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