Bourns BIDNW30N60H3 Single Diode IGBT, 30 A 600 V TO-247N
- RS Stock No.:
- 253-3503
- Mfr. Part No.:
- BIDNW30N60H3
- Brand:
- Bourns
2344 In stock - FREE next working day delivery available
Added
Price Each (In a Pack of 2)
£3.00
(exc. VAT)
£3.60
(inc. VAT)
| Units | Per unit | Per Pack* |
| 2 - 8 | £3.00 | £6.00 |
| 10 - 48 | £2.70 | £5.40 |
| 50 - 98 | £2.55 | £5.10 |
| 100 - 248 | £2.215 | £4.43 |
| 250 + | £2.17 | £4.34 |
| *price indicative | ||
- RS Stock No.:
- 253-3503
- Mfr. Part No.:
- BIDNW30N60H3
- Brand:
- Bourns
Technical Reference
Legislation and Compliance
Product Details
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses.
600 V, 30 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant
Trench-Gate Field-Stop technology
Low switching loss
Fast switching
RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Maximum Continuous Collector Current | 30 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 1 |
| Maximum Power Dissipation | 230 W |
| Configuration | Single Diode |
| Package Type | TO-247N |
Related links
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