STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 795-9198
- Mfr. Part No.:
- STGW30NC60WD
- Brand:
- STMicroelectronics
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£7.15
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£8.58
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Units | Per unit | Per Pack* |
---|---|---|
2 - 8 | £3.575 | £7.15 |
10 - 18 | £3.40 | £6.80 |
20 - 48 | £3.06 | £6.12 |
50 - 98 | £2.755 | £5.51 |
100 + | £2.61 | £5.22 |
*price indicative
- RS Stock No.:
- 795-9198
- Mfr. Part No.:
- STGW30NC60WD
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 60 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 200 W | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Switching Speed | 1MHz | |
Transistor Configuration | Single | |
Dimensions | 15.75 x 5.15 x 20.15mm | |
Minimum Operating Temperature | -55 °C | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 60 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 200 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 20.15mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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