Bourns BIDW20N60T Single Diode IGBT, 20 A 600 V TO-247
- RS Stock No.:
- 253-3504
- Mfr. Part No.:
- BIDW20N60T
- Brand:
- Bourns
Subtotal (1 tube of 600 units)*
£841.80
(exc. VAT)
£1,010.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
600 + | £1.403 | £841.80 |
*price indicative
- RS Stock No.:
- 253-3504
- Mfr. Part No.:
- BIDW20N60T
- Brand:
- Bourns
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Bourns | |
Maximum Continuous Collector Current | 20 A | |
Maximum Collector Emitter Voltage | 600 V | |
Maximum Gate Emitter Voltage | ±20V | |
Number of Transistors | 1 | |
Maximum Power Dissipation | 192 W | |
Package Type | TO-247 | |
Configuration | Single Diode | |
Select all | ||
---|---|---|
Brand Bourns | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 192 W | ||
Package Type TO-247 | ||
Configuration Single Diode | ||
The Bourns IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteristics with a lower conduction loss and fewer switching losses. In addition, this structure provides a positive temperature coefficient.
600 V, 20 A, Low Collector-Emitter Saturation Voltage (VCE(sat))
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant
Trench-Gate Field-Stop technology
Optimized for conduction
Low switching loss
RoHS compliant
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