onsemi IGBT Module 1000 V Q2BOOST - Case 180BR, Surface

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
245-6987
Mfr. Part No.:
NXH450B100H4Q2F2SG
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Maximum Power Dissipation Pd

79W

Number of Transistors

2

Package Type

Q2BOOST - Case 180BR

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

47.3 mm

Length

93.1mm

Height

12.3mm

Standards/Approvals

RoHS

Series

NXH450B100H4Q2F2SG

Automotive Standard

No

The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.

Silicon or SiC Hybrid technology maximizes power density

Low switching loss reduces system power dissipation

Low inductive layout

Press fit and solder pin options

This Device is Pb free, Halogen Free and is RoHS Compliant

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