onsemi NXH450B100H4Q2F2PG IGBT Module, 101 A 1000 V Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins)
- RS Stock No.:
- 245-6986
- Mfr. Part No.:
- NXH450B100H4Q2F2PG
- Brand:
- onsemi
Subtotal (1 unit)*
£95.54
(exc. VAT)
£114.65
(inc. VAT)
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In Stock
- 36 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £95.54 |
*price indicative
- RS Stock No.:
- 245-6986
- Mfr. Part No.:
- NXH450B100H4Q2F2PG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 101 A | |
| Maximum Collector Emitter Voltage | 1000 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 79 W | |
| Number of Transistors | 2 | |
| Package Type | Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins) | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 101 A | ||
Maximum Collector Emitter Voltage 1000 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 79 W | ||
Number of Transistors 2 | ||
Package Type Q2BOOST - Case 180BG (Pb-Free and Halide-Free Press Fit Pins) | ||
The ON Semiconductor Q2BOOST Module is a Si or SiC Hybrid three channel symmetric boost module. Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes. The module contains an NTC thermistor.
Silicon or SiC Hybrid technology maximizes power density
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
Low switching loss reduces system power dissipation
Low inductive layout
Press fit and solder pin options
This Device is Pb free, Halogen Free and is RoHS Compliant
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