onsemi IGBT Module 1000 V Q2PACK, Surface

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
245-6975
Mfr. Part No.:
NXH350N100H4Q2F2S1G
Brand:
onsemi
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Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Number of Transistors

4

Maximum Power Dissipation Pd

592W

Package Type

Q2PACK

Mount Type

Surface

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

NXH350N100H4Q2F2S1G

Height

12.3mm

Width

47.3 mm

Standards/Approvals

RoHS

Length

93.1mm

Automotive Standard

No

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins


The ON Semiconductor Three Level NPC Q2 pack module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.

Extremely efficient trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

Low package height

These devices are Pb free, Halogen Free,BFR Free and are RoHS Compliant

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