onsemi NXH350N100H4Q2F2P1G IGBT Module 1000 V Q2PACK, Surface

Subtotal (1 unit)*

£142.61

(exc. VAT)

£171.13

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 03 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 +£142.61

*price indicative

Packaging Options:
RS Stock No.:
245-6974
Mfr. Part No.:
NXH350N100H4Q2F2P1G
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1000V

Number of Transistors

4

Maximum Power Dissipation Pd

592W

Package Type

Q2PACK

Mount Type

Surface

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

12.3mm

Width

47.3 mm

Length

93.1mm

Standards/Approvals

RoHS

Series

NXH350N100H4Q2F2P1G

Automotive Standard

No

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins


The ON Semiconductor Three Level NPC Q2Pack Module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.

Extremely efficient trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

Low package height

These devices are Pb free, Halogen Free and are RoHS Compliant

Related links