Infineon FP50R06W2E3BOMA1 IGBT Module, 65 A 600 V
- RS Stock No.:
- 244-5399
- Mfr. Part No.:
- FP50R06W2E3BOMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tray of 15 units)*
£467.97
(exc. VAT)
£561.57
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tray* |
|---|---|---|
| 15 - 15 | £31.198 | £467.97 |
| 30 + | £29.638 | £444.57 |
*price indicative
- RS Stock No.:
- 244-5399
- Mfr. Part No.:
- FP50R06W2E3BOMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 65 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 175 W | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 65 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 175 W | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Low switching losses
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
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