ON Semiconductor FGA15N120ANTDTU_F109 IGBT, 24 A 1200 V, 3-Pin TO-3PN

Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
COO (Country of Origin): MY
Product Details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specifications
Attribute Value
Maximum Continuous Collector Current 24 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Package Type TO-3PN
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Dimensions 15.8 x 5 x 18.9mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Available to back order for despatch when stock is available
Price Each (In a Tube of 30)
£ 1.81
(exc. VAT)
£ 2.17
(inc. VAT)
Units
Per unit
Per Tube*
30 - 120
£1.81
£54.30
150 - 270
£1.629
£48.87
300 +
£1.484
£44.52
*price indicative
Related Products
Insulated Gate Bipolar Transistors (IGBT) for motor drive ...
Description:
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. IGBT Discretes, ON Semiconductor. IGBT Discretes, ON Semiconductor.
Optimised IGBTs designed for medium frequency applications with ...
Description:
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's. Single IGBT over 21A, Infineon. IGBT Transistors, International Rectifier.
Based on trench-field stop (TFS) technology, the 1200 ...
Description:
Based on trench-field stop (TFS) technology, the 1200 V IGBT M series is designed for applications working at a switching frequency between 2 and 20 k Hz. With highly optimized conduction and turn-off characteristics, as well as turn-on losses, these IGBTs are ideal for use in hard-switching circuits in applications ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and ...