Infineon F475R12KS4B11BOSA1 Dual Half Bridge IGBT Module, 100 A 1200 V, 24-Pin ECONO2, PCB Mount
- RS Stock No.:
- 168-8761
- Mfr. Part No.:
- F475R12KS4B11BOSA1
- Brand:
- Infineon
Discontinued
- RS Stock No.:
- 168-8761
- Mfr. Part No.:
- F475R12KS4B11BOSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 500 W | |
| Package Type | ECONO2 | |
| Configuration | Dual Half Bridge | |
| Mounting Type | PCB Mount | |
| Channel Type | N | |
| Pin Count | 24 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Dual Half Bridge | |
| Dimensions | 107.5 x 45 x 17mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +125 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 500 W | ||
Package Type ECONO2 | ||
Configuration Dual Half Bridge | ||
Mounting Type PCB Mount | ||
Channel Type N | ||
Pin Count 24 | ||
Switching Speed 1MHz | ||
Transistor Configuration Dual Half Bridge | ||
Dimensions 107.5 x 45 x 17mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +125 °C | ||
- COO (Country of Origin):
- CN
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.