onsemi FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264, Through Hole
- RS Stock No.:
- 671-5408
- Mfr. Part No.:
- FGL40N120ANDTU
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 671-5408
- Mfr. Part No.:
- FGL40N120ANDTU
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Maximum Continuous Collector Current | 64 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±25V | |
Package Type | TO-264 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Transistor Configuration | Single | |
Dimensions | 20 x 5 x 26mm | |
Minimum Operating Temperature | -55 °C | |
Maximum Operating Temperature | +150 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 64 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±25V | ||
Package Type TO-264 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 20 x 5 x 26mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- CN
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.