onsemi FGA15N120ANTDTU_F109 IGBT, 24 A 1200 V, 3-Pin TO-3PN, Through Hole

View all IGBTs
Discontinued
RS Stock No.:
145-5381
Mfr. Part No.:
FGA15N120ANTDTU_F109
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

24 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 18.9mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
MY

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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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