onsemi FGH15T120SMD-F155 IGBT, 30 A 1200 V, 3-Pin TO-247, Surface Mount

View all IGBTs
Discontinued
Packaging Options:
RS Stock No.:
864-8833
Mfr. Part No.:
FGH15T120SMD-F155
Brand:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±25V

Maximum Power Dissipation

333 W

Package Type

TO-247

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.87 x 4.82 x 20.82mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Discrete IGBTs, 1000V and over, Fairchild Semiconductor



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The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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