Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 pack of 4 units)*

£13.04

(exc. VAT)

£15.64

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 03 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
4 - 16£3.26£13.04
20 - 36£3.098£12.39
40 - 96£2.968£11.87
100 - 196£2.835£11.34
200 +£2.64£10.56

*price indicative

Packaging Options:
RS Stock No.:
110-7153
Mfr. Part No.:
IGW15N120H3FKSA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Continuous Collector Current

15 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

217 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Minimum Operating Temperature

-40 °C

Energy Rating

2.5mJ

Maximum Operating Temperature

+175 °C

Gate Capacitance

875pF

Infineon TrenchStop IGBT Transistors, 1100 to 1600V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links