Infineon IKWH50N67PR7XKSA1, P-Channel Single IGBT, 105 A 670 V, 3-Pin PG-TO247-3-U04, Through Hole
- RS Stock No.:
- 351-937
- Mfr. Part No.:
- IKWH50N67PR7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£4.38
(exc. VAT)
£5.26
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £2.19 | £4.38 |
20 - 198 | £1.97 | £3.94 |
200 - 998 | £1.82 | £3.64 |
1000 - 1998 | £1.69 | £3.38 |
2000 + | £1.51 | £3.02 |
*price indicative
- RS Stock No.:
- 351-937
- Mfr. Part No.:
- IKWH50N67PR7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Maximum Continuous Collector Current | 105 A | |
Maximum Collector Emitter Voltage | 670 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 246 W | |
Number of Transistors | 1 | |
Configuration | Single | |
Package Type | PG-TO247-3-U04 | |
Mounting Type | Through Hole | |
Channel Type | P | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 105 A | ||
Maximum Collector Emitter Voltage 670 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 246 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type PG-TO247-3-U04 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The Infineon TRENCHSTOP IGBT7 PR7 in TO-247-3pin in high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the successor of TRENCHSTOP IGBT 5 with improved EMI characteristics, best-in-class reliability and robustness, offering the advanced performance and even better price-performance for high power and high switching frequency applications.
Better EMI performance
Advanced performance in high switching
More design flexibility
Improved isolation for high reliability
Easy paralleling
Advanced performance in high switching
More design flexibility
Improved isolation for high reliability
Easy paralleling
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