Infineon IKWH30N67PR7XKSA1, P-Channel Single IGBT, 71 A 670 V, 3-Pin PG-TO247-3-U04, Through Hole
- RS Stock No.:
- 351-934
- Mfr. Part No.:
- IKWH30N67PR7XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.93
(exc. VAT)
£9.515
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 240 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.586 | £7.93 |
| 50 - 95 | £1.506 | £7.53 |
| 100 - 495 | £1.396 | £6.98 |
| 500 - 995 | £1.284 | £6.42 |
| 1000 + | £1.238 | £6.19 |
*price indicative
- RS Stock No.:
- 351-934
- Mfr. Part No.:
- IKWH30N67PR7XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 71 A | |
| Maximum Collector Emitter Voltage | 670 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 179 W | |
| Configuration | Single | |
| Package Type | PG-TO247-3-U04 | |
| Mounting Type | Through Hole | |
| Channel Type | P | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 71 A | ||
Maximum Collector Emitter Voltage 670 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 179 W | ||
Configuration Single | ||
Package Type PG-TO247-3-U04 | ||
Mounting Type Through Hole | ||
Channel Type P | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The Infineon TRENCHSTOP IGBT7 PR7 in TO-247-3pin in high creepage and clearance package is specifically optimized for boost PFC stage like RAC / CAC and HVAC application. It's the successor of TRENCHSTOP IGBT 5 with improved EMI characteristics, best-in-class reliability and robustness, offering the advanced performance and even better price-performance for high power and high switching frequency applications.
Better EMI performance
Advanced performance in high switching
More design flexibility
Improved isolation for high reliability
Easy paralleling
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