Vishay SI7489DP-T1-E3 IGBT

Bulk discount available

Subtotal (1 pack of 5 units)*

£10.05

(exc. VAT)

£12.05

(inc. VAT)

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Being discontinued
  • 30 left, ready to ship
  • Final 2,425 unit(s) shipping from 09 October 2025
Units
Per unit
Per Pack*
5 - 45£2.01£10.05
50 - 120£1.81£9.05
125 - 245£1.508£7.54
250 - 495£1.448£7.24
500 +£1.366£6.83

*price indicative

Packaging Options:
RS Stock No.:
180-7802
Mfr. Part No.:
SI7489DP-T1-E3
Brand:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel SO-8 MOSFET is a new age product with a drain-source voltage of 100V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 41mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 83W and continuous drain current of 28A. It has a minimum and a maximum driving voltage of 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• New low thermal resistance PowerPAK package with low 1.07mm profile
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET

Applications


• Half-bridge motor drives
• High voltage non-synchronous buck converters
• Load switches

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21

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