STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-009
- Mfr. Part No.:
- STGWA50M65DF2AG
- Brand:
- STMicroelectronics
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£4.41
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£5.29
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- 25 unit(s) ready to ship
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1 + | £4.41 |
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- RS Stock No.:
- 215-009
- Mfr. Part No.:
- STGWA50M65DF2AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 119 A | |
Maximum Collector Emitter Voltage | 650 V | |
Maximum Gate Emitter Voltage | ±20V | |
Maximum Power Dissipation | 576 W | |
Number of Transistors | 1 | |
Configuration | Single | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 119 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 576 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Minimized tail current
Tight parameter distribution
Safer paralleling
Tight parameter distribution
Safer paralleling
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