STMicroelectronics GWA40MS120DF4AG Single IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-030
- Mfr. Part No.:
- GWA40MS120DF4AG
- Brand:
- STMicroelectronics
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£6.12
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£7.34
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Units | Per unit |
---|---|
1 + | £6.12 |
*price indicative
- RS Stock No.:
- 215-030
- Mfr. Part No.:
- GWA40MS120DF4AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Maximum Continuous Collector Current | 80 A | |
Maximum Collector Emitter Voltage | 1200 V | |
Maximum Gate Emitter Voltage | ±30V | |
Maximum Power Dissipation | 536 W | |
Number of Transistors | 1 | |
Configuration | Single | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Channel Type | N | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±30V | ||
Maximum Power Dissipation 536 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the MS series IGBTs, which represent an evolution of low-loss M series specifically designed for inverter system thanks to the outstanding short-circuit capability at high bus voltage value. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Minimized tail current
Tight parameter distribution
Safer paralleling
Tight parameter distribution
Safer paralleling
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