Infineon 2ED4820EMXUMA2 MOSFET Gate Driver, 4 mA, 20 → 70V 24-Pin, TSDSO-24
- RS Stock No.:
- 248-3066
- Mfr. Part No.:
- 2ED4820EMXUMA2
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£5,832.00
(exc. VAT)
£6,999.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £1.944 | £5,832.00 |
*price indicative
- RS Stock No.:
- 248-3066
- Mfr. Part No.:
- 2ED4820EMXUMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Output Current | 4 mA | |
Supply Voltage | 20 → 70V | |
Pin Count | 24 | |
Package Type | TSDSO-24 | |
Driver Type | MOSFET | |
Select all | ||
---|---|---|
Brand Infineon | ||
Output Current 4 mA | ||
Supply Voltage 20 → 70V | ||
Pin Count 24 | ||
Package Type TSDSO-24 | ||
Driver Type MOSFET | ||
The Infineon 2ED4820-EM is a gate driver designed for high current 48 V automotive applications, with powerful gate outputs to drive many MOSFETs in parallel in order to minimize the conduction losses. It supports the back-to-back configuration, both common source and common drain structures, thanks to its two gate outputs. In common source configuration, one gate output can be used to pre-charge highly capacitive loads. The 2ED4820-EM generates the supply for the gate outputs based on an integrated one-stage charge pump with external pump and tank capacitors. Also, it comes with an SPI interface, for easy configuration, diagnosis and control.
Extended supply voltage range is 20 to 70 V and two independent high-side gate driver outputs
1 A pull down, 0.3 A pull up for fast switch off/on
Device control, configuration and diagnostic via SPI
Low supply current in sleep mode IBAT_Q < 5 μA
1 A pull down, 0.3 A pull up for fast switch off/on
Device control, configuration and diagnostic via SPI
Low supply current in sleep mode IBAT_Q < 5 μA
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