Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G
- RS Stock No.:
- 124-2990
- Mfr. Part No.:
- FM25V20A-G
- Brand:
- Infineon
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£14.99
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£17.99
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- 11 unit(s) ready to ship
- Plus 218 unit(s) shipping from 30 October 2025
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Units | Per unit |
---|---|
1 - 9 | £14.99 |
10 - 24 | £14.59 |
25 - 99 | £14.20 |
100 - 499 | £13.84 |
500 + | £13.49 |
*price indicative
- RS Stock No.:
- 124-2990
- Mfr. Part No.:
- FM25V20A-G
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Memory Size | 2Mbit | |
Organisation | 256K x 8 bit | |
Interface Type | SPI | |
Data Bus Width | 8bit | |
Maximum Random Access Time | 16ns | |
Mounting Type | Surface Mount | |
Package Type | SOIC | |
Pin Count | 8 | |
Dimensions | 5.33 x 5.33 x 1.78mm | |
Length | 5.33mm | |
Width | 5.33mm | |
Maximum Operating Supply Voltage | 3.6 V | |
Height | 1.78mm | |
Maximum Operating Temperature | +85 °C | |
Number of Bits per Word | 8bit | |
Minimum Operating Supply Voltage | 2 V | |
Minimum Operating Temperature | -40 °C | |
Number of Words | 256K | |
Select all | ||
---|---|---|
Brand Infineon | ||
Memory Size 2Mbit | ||
Organisation 256K x 8 bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Dimensions 5.33 x 5.33 x 1.78mm | ||
Length 5.33mm | ||
Width 5.33mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1.78mm | ||
Maximum Operating Temperature +85 °C | ||
Number of Bits per Word 8bit | ||
Minimum Operating Supply Voltage 2 V | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 256K | ||
- COO (Country of Origin):
- TH
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
Fast write speed
High endurance
Low power consumption
2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Related links
- Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G
- Infineon 2Mbit SPI FRAM Memory 8-Pin DFN, FM25V20A-DG
- Infineon 2Mbit Serial-SPI FRAM Memory 8-Pin DFN, FM25V20A-DGQ
- Infineon 2Mbit Serial-SPI FRAM Memory 8-Pin SOIC, CY15V102QN-50SXE
- Infineon 128kbit SPI FRAM Memory 8-Pin SOIC, FM25V01A-G
- Infineon 256kbit SPI FRAM Memory 8-Pin SOIC, FM25W256-G
- Infineon 4kbit SPI FRAM Memory 8-Pin SOIC, FM25040B-G
- Infineon 64kbit SPI FRAM Memory 8-Pin SOIC, FM25640B-G