2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K x 8
Virtually unlimited endurance of 10 trillion (1013) read/write cycles
121-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast serial peripheral interface (SPI)
Up to 50 MHz frequency
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable (WRDI) instruction
Software block protection for 1/4, 1/2, or entire array
Device ID and Serial Number
Device ID includes manufacturer ID and product ID
Unique ID
Serial Number
Dedicated 256-byte special sector F-RAM
Dedicated special sector write and read
Stored content can survive up to 3 standard reflow soldering cycles
Low-power consumption
3.7 mA (typ) active current at 40 MHz
2.7 μA (typ) standby current
1.1 μA (typ) Deep Power Down mode current
0.1 μA (typ) Hibernate mode current
Low-voltage operation:
CY15V102QN: VDD = 1.71 V to 1.89 V
CY15B102QN: VDD = 1.8 V to 3.6 V
Automotive operating temperature: -40 °C to +125 °C
AEC-Q100 Grade 1 compliant
8-pin Small Outline Integrated Circuit (SOIC) package