The Infineon FRAM is a low power, 2Mb non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. This FRAM has fast SPI and supports SPI mode 0 and mode 3.

RoHS compliant
Low voltage operation
Low power consumption
Sophisticated write protection scheme
Dedicated 256 byte special sector FRAM
Software protection using write disable instruction