Infineon 2Mbit SPI FRAM Memory 8-Pin SOIC, FM25V20A-G

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Subtotal (1 tube of 94 units)*

£1,203.106

(exc. VAT)

£1,443.746

(inc. VAT)

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  • 188 unit(s) ready to ship
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Per Tube*
94 - 94£12.799£1,203.11
188 +£12.479£1,173.03

*price indicative

RS Stock No.:
188-5423
Mfr. Part No.:
FM25V20A-G
Brand:
Infineon
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Brand

Infineon

Memory Size

2Mbit

Organisation

256k x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

8

Dimensions

5.33 x 5.33 x 1.78mm

Length

5.33mm

Width

5.33mm

Maximum Operating Supply Voltage

3.6 V

Height

1.78mm

Maximum Operating Temperature

+85 °C

Number of Words

256k

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

2 V

Number of Bits per Word

8bit

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention (See the Data Retention and Endurance table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast SPI
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 μA active current at 1 MHz
100 μA (typ) standby current
3 μA sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin dual flat no leads (DFN) package


FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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