onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

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Subtotal (1 pack of 15 units)*

£19.47

(exc. VAT)

£23.37

(inc. VAT)

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15 +£1.298£19.47

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Packaging Options:
RS Stock No.:
790-5315
Mfr. Part No.:
MJD112-1G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Length

6.73mm

Minimum Operating Temperature

-65 °C

Maximum Power Dissipation

20 W

Width

2.38mm

Height

6.35mm

Maximum Operating Temperature

+150 °C

Dimensions

6.73 x 2.38 x 6.35mm

NPN Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJD112 is the complementary Darlington power transistors designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Straight lead version in plastic sleeves
These devices are Pb free and are RoHS compliant

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