onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

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Subtotal (1 tube of 75 units)*

£35.475

(exc. VAT)

£42.60

(inc. VAT)

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  • 300 unit(s) ready to ship
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Units
Per unit
Per Tube*
75 - 75£0.473£35.48
150 - 300£0.445£33.38
375 +£0.426£31.95

*price indicative

RS Stock No.:
178-4811
Mfr. Part No.:
MJD112-1G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Height

6.35mm

Width

2.38mm

Length

6.73mm

Maximum Power Dissipation

20 W

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-65 °C

Dimensions

6.73 x 2.38 x 6.35mm

NPN Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJD112 is the complementary Darlington power transistors designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Straight lead version in plastic sleeves
These devices are Pb free and are RoHS compliant

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