onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
- RS Stock No.:
- 178-4811
- Mfr. Part No.:
- MJD112-1G
- Brand:
- onsemi
Available to back order for despatch 24/07/2024
Added
Price Each (In a Tube of 75)
£0.423
(exc. VAT)
£0.508
(inc. VAT)
| Units | Per unit | Per Tube* |
| 75 - 75 | £0.423 | £31.725 |
| 150 - 300 | £0.398 | £29.85 |
| 375 + | £0.381 | £28.575 |
| *price indicative | ||
- RS Stock No.:
- 178-4811
- Mfr. Part No.:
- MJD112-1G
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
The ON Semiconductor MJD112 is the complementary Darlington power transistors designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Straight lead version in plastic sleeves
These devices are Pb free and are RoHS compliant
These devices are Pb free and are RoHS compliant
Specifications
Attribute | Value |
|---|---|
| Transistor Type | NPN |
| Maximum Continuous Collector Current | 2 A |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Emitter Base Voltage | 5 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain | 1000 |
| Maximum Base Emitter Saturation Voltage | 4 V |
| Maximum Collector Base Voltage | 100 V |
| Maximum Collector Emitter Saturation Voltage | 3 V |
| Maximum Collector Cut-off Current | 20µA |
| Maximum Operating Temperature | +150 °C |
| Length | 6.73mm |
| Dimensions | 6.73 x 2.38 x 6.35mm |
| Minimum Operating Temperature | -65 °C |
| Maximum Power Dissipation | 20 W |
| Width | 2.38mm |
| Height | 6.35mm |
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