onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)

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Subtotal (1 tube of 75 units)*

£35.475

(exc. VAT)

£42.60

(inc. VAT)

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  • 300 unit(s) ready to ship
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Units
Per unit
Per Tube*
75 - 75£0.473£35.48
150 - 300£0.445£33.38
375 +£0.426£31.95

*price indicative

RS Stock No.:
178-4811
Mfr. Part No.:
MJD112-1G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Height

6.35mm

Minimum Operating Temperature

-65 °C

Width

2.38mm

Maximum Power Dissipation

20 W

Maximum Operating Temperature

+150 °C

Length

6.73mm

Dimensions

6.73 x 2.38 x 6.35mm

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