onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

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Subtotal (1 pack of 15 units)*

£11.085

(exc. VAT)

£13.305

(inc. VAT)

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  • 135 unit(s) ready to ship
  • Plus 150 unit(s) shipping from 31 October 2025
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15 +£0.739£11.09

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RS Stock No.:
790-5319
Mfr. Part No.:
MJD112G
Brand:
onsemi
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Brand

onsemi

Transistor Type

NPN

Maximum Continuous Collector Current

2 A

Maximum Collector Emitter Voltage

100 V

Maximum Emitter Base Voltage

5 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Transistor Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

1000

Maximum Base Emitter Saturation Voltage

4 V

Maximum Collector Base Voltage

100 V

Maximum Collector Emitter Saturation Voltage

3 V

Maximum Collector Cut-off Current

20µA

Dimensions

6.73 x 6.22 x 2.38mm

Maximum Operating Temperature

+150 °C

Maximum Power Dissipation

20 W

Minimum Operating Temperature

-65 °C

Length

6.73mm

Width

6.22mm

Height

2.38mm

NPN Darlington Transistors, ON Semiconductor


Standards

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.

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