onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

RS Stock No.:: 790-5319
Mfr. Part No.:: MJD112G
Brand:: onsemi

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

120 In stock - FREE next working day delivery available

135 available from Europe for delivery within 2 working day(s).

Price Each (In a Pack of 15)

£0.471

(exc. VAT)

£0.565

(inc. VAT)

Units	Per unit	Per Pack*
15 - 90	£0.471	£7.065
105 - 495	£0.349	£5.235
510 - 990	£0.273	£4.095
1005 - 2490	£0.222	£3.33
2505 +	£0.207	£3.105

*price indicative

RS Stock No.:: 790-5319
Mfr. Part No.:: MJD112G
Brand:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Transistor Type	NPN
Maximum Continuous Collector Current	2 A
Maximum Collector Emitter Voltage	100 V
Maximum Emitter Base Voltage	5 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Transistor Configuration	Single
Number of Elements per Chip	1
Minimum DC Current Gain	1000
Maximum Base Emitter Saturation Voltage	4 V
Maximum Collector Base Voltage	100 V
Maximum Collector Emitter Saturation Voltage	3 V
Maximum Collector Cut-off Current	20µA
Maximum Operating Temperature	+150 °C
Width	6.22mm
Height	2.38mm
Length	6.73mm
Dimensions	6.73 x 6.22 x 2.38mm
Minimum Operating Temperature	-65 °C
Maximum Power Dissipation	20 W

onsemi MJD112G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin DPAK

NPN Darlington Transistors, ON Semiconductor

Standards

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