STMicroelectronics 2STN2540 PNP Transistor, -5 A, -40 V, 3 + Tab-Pin SOT-223
- RS Stock No.:
- 686-7991
- Mfr. Part No.:
- 2STN2540
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 20 units)*
£9.24
(exc. VAT)
£11.08
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,320 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | £0.462 | £9.24 |
| 40 + | £0.439 | £8.78 |
*price indicative
- RS Stock No.:
- 686-7991
- Mfr. Part No.:
- 2STN2540
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -5 A | |
| Maximum Collector Emitter Voltage | -40 V | |
| Package Type | SOT-223 (SC-73) | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 1.6 W | |
| Minimum DC Current Gain | 50 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 40 V | |
| Maximum Emitter Base Voltage | 6 V | |
| Pin Count | 3 + Tab | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Dimensions | 1.8 x 6.3 x 3.3mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Transistor Type PNP | ||
Maximum DC Collector Current -5 A | ||
Maximum Collector Emitter Voltage -40 V | ||
Package Type SOT-223 (SC-73) | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 1.6 W | ||
Minimum DC Current Gain 50 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 40 V | ||
Maximum Emitter Base Voltage 6 V | ||
Pin Count 3 + Tab | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 1.8 x 6.3 x 3.3mm | ||
General Purpose PNP Transistors, STMicroelectronics
The STMicroelectronics low voltage fast-switching PNP power transistor new using new PB-HCD (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Very low collector-emitter saturation voltage
High current gain characteristic
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High current gain characteristic
Fast-switching speed
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