onsemi BDV64BG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin TO-218
- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Brand:
- onsemi
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£51.78
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 30 - 120 | £1.726 | £51.78 | - |
| 150 - 270 | £1.438 | £43.14 | 16% |
| 300 + | £1.403 | £42.09 | 18% |
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- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | TO-218 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 1000 | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Transistor Polarity | PNP | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Series | BDV64B | |
| Length | 16.26mm | |
| Height | 41.91mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type TO-218 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 1000 | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Transistor Polarity PNP | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Series BDV64B | ||
Length 16.26mm | ||
Height 41.91mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
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