onsemi BDV64BG PNP Transistor, -10 A, -100 V, 3-Pin TO-218
- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Brand:
- onsemi
Bulk discount available
Subtotal (1 tube of 30 units)*
£53.46
(exc. VAT)
£64.14
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 420 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
---|---|---|
30 - 120 | £1.782 | £53.46 |
150 - 270 | £1.484 | £44.52 |
300 + | £1.449 | £43.47 |
*price indicative
- RS Stock No.:
- 184-4188
- Mfr. Part No.:
- BDV64BG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Transistor Type | PNP | |
Maximum DC Collector Current | -10 A | |
Maximum Collector Emitter Voltage | -100 V | |
Package Type | TO-218 | |
Mounting Type | Through Hole | |
Maximum Power Dissipation | 125 W | |
Transistor Configuration | Single | |
Maximum Collector Base Voltage | 100 V dc | |
Maximum Emitter Base Voltage | 5 V dc | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Dimensions | 15.2 x 4.9 x 20.35mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Transistor Type PNP | ||
Maximum DC Collector Current -10 A | ||
Maximum Collector Emitter Voltage -100 V | ||
Package Type TO-218 | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 100 V dc | ||
Maximum Emitter Base Voltage 5 V dc | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 15.2 x 4.9 x 20.35mm | ||
- COO (Country of Origin):
- CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
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