onsemi BDV64BG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin TO-218

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Subtotal (1 tube of 30 units)*

£43.26

(exc. VAT)

£51.90

(inc. VAT)

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In Stock
  • 390 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 120£1.442£43.26
150 - 270£1.201£36.03
300 +£1.172£35.16

*price indicative

RS Stock No.:
184-4188
Mfr. Part No.:
BDV64BG
Brand:
onsemi
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Brand

onsemi

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

-10A

Maximum Collector Emitter Voltage Vceo

-100V

Package Type

TO-218

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

100V dc

Maximum Emitter Base Voltage VEBO

5V dc

Minimum DC Current Gain hFE

1000

Transistor Polarity

PNP

Maximum Power Dissipation Pd

125W

Minimum Operating Temperature

-65°C

Maximum Operating Temperature

150°C

Pin Count

3

Length

16.26mm

Series

BDV64B

Standards/Approvals

No

Height

41.91mm

Automotive Standard

No

COO (Country of Origin):
CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.

High DC Current Gain HFE = 1000 (min.) @ 5 Adc

Monolithic Construction with Built-in Base Emitter Shunt Resistors

These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices

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