onsemi MJH11020G Transistor, 30 A NPN, 250 V, 3-Pin TO-218

View all Bipolar Transistors
Bulk discount available

Subtotal (1 pack of 2 units)*

£8.71

(exc. VAT)

£10.452

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 12 unit(s) shipping from 27 April 2026
  • Plus 6 unit(s) shipping from 04 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Pack*
2 - 18£4.355£8.71
20 +£3.755£7.51

*price indicative

Packaging Options:
RS Stock No.:
184-1168
Mfr. Part No.:
MJH11020G
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

30A

Maximum Collector Emitter Voltage Vceo

250V

Package Type

TO-218

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

200V

Maximum Transition Frequency ft

1MHz

Transistor Polarity

NPN

Minimum Operating Temperature

-65°C

Maximum Emitter Base Voltage VEBO

5V

Minimum DC Current Gain hFE

100

Maximum Power Dissipation Pd

150W

Pin Count

3

Maximum Operating Temperature

150°C

Height

33.15mm

Length

16.26mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.

High DC Current Gain @ 10 Adc -

hFE = 400 Min (All Types)

Collector-Emitter Sustaining Voltage

VCEO(sus) = 150 Vdc (Min) MJH11018, 17

VCEO(sus) = 200 Vdc (Min) - MJH11020, 19

VCEO(sus) = 250 Vdc (Min) - MJH11022, 21

Low Collector-Emitter Saturation Voltage

VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A

VCE(sat) = 1.8 V (Typ) @ IC = 10 A

Monolithic Construction

Related links