onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS Stock No.:
- 184-1139
- Mfr. Part No.:
- MJF45H11G
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£8.64
(exc. VAT)
£10.37
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 80 unit(s) ready to ship
- Plus 100 unit(s) shipping from 28 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £1.728 | £8.64 |
*price indicative
- RS Stock No.:
- 184-1139
- Mfr. Part No.:
- MJF45H11G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Transition Frequency ft | 20MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | PNP | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 1.18mm | |
| Standards/Approvals | No | |
| Length | 0.42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Maximum Power Dissipation Pd 36W | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Transition Frequency ft 20MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity PNP | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 1.18mm | ||
Standards/Approvals No | ||
Length 0.42mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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