CoolSiC™ MOSFETs are a series of silicon carbide (SiC) power transistors developed by Infineon Technologies. These devices leverage the superior electrical properties of silicon carbide compared to traditional silicon (Si) to offer significant performance improvements, especially in high-power and high-efficiency applications.

CoolSiC™ MOSFETs features include:

• High Efficiency - exhibit lower conduction and switching losses than silicon-based MOSFETs, leading to higher overall system efficiency.
• High Switching Frequencies - the fast switching capabilities of SiC technology enable higher operating frequencies, which can reduce the size and weight of passive components such as inductors and capacitors.
• High Temperature Operation - SiC devices can operate at higher temperatures compared to their silicon counterparts, which reduces the need for extensive cooling and allows for more compact designs.
• Robustness and Reliability even under harsh conditions.
• Low On-Resistance - they have a significantly lower on-resistance (Rds(on)) compared to silicon MOSFETs, which reduces conduction losses and improves efficiency.

Applications of CoolSiC™ MOSFETs

CoolSiC™ MOSFETs are suitable for a wide range of applications, particularly where efficiency, thermal performance, and high power density are crucial. Common applications include:

• Power Supplies - used in switch-mode power supplies (SMPS), server power supplies, and telecom power systems
• Renewable Energy Systems
• Industrial Drives
• Electric Vehicle (EV) Systems
• Integrated into uninterruptible power supplies (UPS

CoolSiC™ MOSFETs represent a significant advancement in power semiconductor technology, offering superior efficiency, high temperature operation, and robustness compared to traditional silicon-based MOSFETs. These characteristics make them highly suitable for demanding applications iwhere performance and reliability are critical.