IGBTs

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors, Bipolar transistors and MOSFET.

How do IGBT transistors work?

IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure. IGBT transistors are widely used for switching electrical power in applications such as welding, electric cars, air conditioners, trains and uninterruptible power supplies.

What are the different types of IGBT Transistors?

There are various types of IGBT transistors and they are categorised by parameters such as maximum voltage, collector current, packaging type and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level, and the applications being considered.

What is a difference between MOSFETs and IGBTs?

An IGBTs do have a much lower forward voltage drop compared to a conventional MOSFET in a higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.

An IGBT transistor module (insulated-gate bipolar transistor) consists of one or more IGBTs and is used in many types of industrial equipment due to its reliability. IGBT transistors are a cross between bipolar junction transistors (BJTs) and MOSFET. They are highly efficient and fast switching plus they have high current and low saturation voltage characteristics.

What is a typical application of IGBTs?

  • Electric motor

...
Read more Read less

Filters

Viewing 61 - 80 of 1477 products
Results per page
Description Price Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Configuration Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Dimensions Automotive Standard
RS Stock No. 468-2498
Mfr. Part No.SKM300GB125D
BrandSemikron
£167.69
Each
Units
300 A 1200 V ±20V - - Dual Half Bridge SEMITRANS3 Panel Mount N 7 - Series 106.4 x 61.4 x 30.5mm -
RS Stock No. 541-1304
Mfr. Part No.IRG4PC50FDPBF
BrandInfineon
£6.51
Each
Units
70 A 600 V ±20V - - - TO-247AC Through Hole N 3 - Single 15.9 x 5.3 x 20.3mm -
RS Stock No. 913-3752
Mfr. Part No.IRG4PC40SPBF
BrandInfineon
£2.959
Each (In a Tube of 25)
Units
60 A 600 V ±20V - - - TO-247AC Through Hole N 3 - Single 15.9 x 5.3 x 20.3mm -
RS Stock No. 543-0260
Mfr. Part No.IRG4PC40SPBF
BrandInfineon
£3.48
Each
Units
60 A 600 V ±20V - - - TO-247AC Through Hole N 3 - Single 15.9 x 5.3 x 20.3mm -
RS Stock No. 124-9040
Mfr. Part No.FP40R12KE3BOSA1
BrandInfineon
£62.536
Each (In a Box of 10)
Units
55 A 1200 V ±20V 210 W - 3 Phase Bridge EconoPIM2 PCB Mount N 24 - 3 Phase 107.5 x 45 x 17mm -
RS Stock No. 913-3758
Mfr. Part No.IRG4PC40KDPBF
BrandInfineon
£3.927
Each (In a Tube of 25)
Units
42 A 600 V ±20V - - - TO-247AC Through Hole N 3 - Single 15.9 x 5.3 x 20.3mm -
RS Stock No. 891-2746
Mfr. Part No.GT40WR21,Q(O
BrandToshiba
£3.53
Each
Units
40 A 1800 V ±25V 375 W - - TO-3P Through Hole N 3 0.55µs Single 15.5 x 4.5 x 20mm -
RS Stock No. 920-0993
Mfr. Part No.IXA37IF1200HJ
BrandIXYS
£4.638
Each (In a Tube of 30)
Units
58 A 1200 V ±20V 195 W - - ISOPLUS247 Through Hole N 3 - Single 16.13 x 5.21 x 21.34mm -
RS Stock No. 543-0254
Mfr. Part No.IRG4PC40KDPBF
BrandInfineon
£4.63
Each
Units
42 A 600 V ±20V - - - TO-247AC Through Hole N 3 - Single 15.9 x 5.3 x 20.3mm -
RS Stock No. 808-0215
Mfr. Part No.IXA37IF1200HJ
BrandIXYS
£4.68
Each
Units
58 A 1200 V ±20V 195 W - - ISOPLUS247 Through Hole N 3 - Single 16.13 x 5.21 x 21.34mm -
RS Stock No. 541-1512
Mfr. Part No.IRG4BC20FDPBF
BrandInfineon
£2.07
Each
Units
16 A 600 V ±20V - - - TO-220AB Through Hole N 3 - Single 10.54 x 4.69 x 8.77mm -
RS Stock No. 838-6923
Mfr. Part No.FS75R12KE3GBOSA1
BrandInfineon
£94.86
Each
Units
100 A 1200 V ±20V 355 W - 3 Phase Bridge ECONO3 PCB Mount N 35 1MHz 3 Phase 122 x 62 x 17mm -
RS Stock No. 166-1024
Mfr. Part No.IRG4BC20FDPBF
BrandInfineon
£1.759
Each (In a Tube of 50)
Units
16 A 600 V ±20V - - - TO-220AB Through Hole N 3 - Single 10.54 x 4.69 x 8.77mm -
RS Stock No. 687-4961
Mfr. Part No.SKM75GB12T4
BrandSemikron
£81.96
Each
Units
115 A 1200 V ±20V - - Dual Half Bridge SEMITRANS2 Panel Mount N 7 - Series 94 x 34 x 30.1mm -
RS Stock No. 543-0327
Mfr. Part No.IRG4PH40KDPBF
BrandInfineon
£4.92
Each
Units
30 A 1200 V ±20V - - - TO-247AC Through Hole N 3 - Single 15.9 x 5.3 x 20.3mm -
RS Stock No. 124-8792
Mfr. Part No.FS75R12KE3GBOSA1
BrandInfineon
£92.418
Each (In a Box of 10)
Units
100 A 1200 V ±20V 355 W - 3 Phase Bridge Econo3 PCB Mount N 35 1MHz 3 Phase 122 x 62 x 17mm -
RS Stock No. 913-3777
Mfr. Part No.IRG4PH40KDPBF
BrandInfineon
£4.17
Each (In a Tube of 25)
Units
30 A 1200 V ±20V - - - TO-247AC Through Hole N 3 - Single 15.9 x 5.3 x 20.3mm -
RS Stock No. 111-6092
Mfr. Part No.FF300R12KE3HOSA1
BrandInfineon
£114.97
Each
Units
440 A 1200 V ±20V 1450 W - Series AG-62MM-1 Panel Mount N - - Series 106.4 x 61.4 x 30.9mm -
RS Stock No. 166-0903
Mfr. Part No.FF300R12KE3HOSA1
BrandInfineon
£103.655
Each (In a Tray of 10)
Units
440 A 1200 V ±20V 1450 W - Series AG-62MM-1 Panel Mount N - - Series 106.4 x 61.4 x 30.9mm -
RS Stock No. 166-2051
Mfr. Part No.ISL9V5036S3ST
£1.116
Each (On a Reel of 800)
Units
46 A 420 V ±14V 250 W - - D2PAK (TO-263) Surface Mount N 3 - Single 10.67 x 9.65 x 4.83mm -
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and ...
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring Trench Stop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 600 to 650V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• ...
A range of IGBT Transistors from Infineon with ...
Description:
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring Trench Stop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. • Collector-emitter voltage range 600 to 650V• Very low VCEsat• Low turn-off losses• Short tail current• Low EMI• ...