onsemi BUL45D2G NPN High Voltage Bipolar Transistor, 5 A, 400 V, 3-Pin TO-220AB

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onsemi MJE18004G NPN Transistor, 5 A, 450 V, 3-Pin TO-220AB
RS Stock No.
544-9501

Each

£1.25

(exc. VAT)

£1.50

(inc. VAT)

RS Stock No.:
544-9466
Mfr. Part No.:
BUL45D2G
Brand:
ON Semiconductor
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Brand

ON Semiconductor

Transistor Type

NPN

Maximum DC Collector Current

5 A

Maximum Collector Emitter Voltage

400 V

Package Type

TO-220AB

Mounting Type

Through Hole

Maximum Power Dissipation

75 W

Maximum Collector Base Voltage

700 V

Maximum Emitter Base Voltage

9 V

Maximum Operating Frequency

12 MHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

9.28 x 10.28 x 4.82mm

Maximum Operating Temperature

+150 °C

Standards

Manufacturer Part Nos with S prefix are automotive qualified to AEC-Q101 standard.
The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available

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