ON Semi BUL45D2G NPN Bipolar Transistor, 5 A, 400 V, 3-Pin TO-220AB
- RS Stock No.:
- 544-9466A
- Mfr. Part No.:
- BUL45D2G
- Brand:
- onsemi
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 544-9466A
- Mfr. Part No.:
- BUL45D2G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Transistor Type | NPN | |
Maximum DC Collector Current | 5 A | |
Maximum Collector Emitter Voltage | 400 V | |
Package Type | TO-220AB | |
Mounting Type | Through Hole | |
Maximum Power Dissipation | 75 W | |
Maximum Collector Base Voltage | 700 V | |
Maximum Emitter Base Voltage | 9 V | |
Maximum Operating Frequency | 12 MHz | |
Pin Count | 3 | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Dimensions | 9.28 x 10.28 x 4.82mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Transistor Type NPN | ||
Maximum DC Collector Current 5 A | ||
Maximum Collector Emitter Voltage 400 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 75 W | ||
Maximum Collector Base Voltage 700 V | ||
Maximum Emitter Base Voltage 9 V | ||
Maximum Operating Frequency 12 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Dimensions 9.28 x 10.28 x 4.82mm | ||
- COO (Country of Origin):
- FR
Standards
Manufacturer Part Nos with S prefix are automotive qualified to AEC-Q101 standard.

The BUL45D2 is state-of-art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread 150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.
Low Base Drive Requirement
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
Integrated Collector-Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCE(sat)
"6 Sigma" Process Providing Tight and Reproductible Parameter Spreads
Pb-Free Package is Available
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