Vishay N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC SI4116DY-T1-GE3

View all MOSFETs
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
919-0272
Mfr. Part No.:
SI4116DY-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.7 A

Maximum Drain Source Voltage

25 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

17.5 nC @ 4.5 V, 37 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

1.55mm

COO (Country of Origin):
CN

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

Related links