Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerPAK SO-8 SIRA06DP-T1-GE3
- RS Stock No.:
 - 787-9373
 - Mfr. Part No.:
 - SIRA06DP-T1-GE3
 - Brand:
 - Vishay
 
Subtotal (1 tape of 5 units)*
£4.04
(exc. VAT)
£4.85
(inc. VAT)
FREE delivery for orders over £50.00
- 999,999,995 unit(s) shipping from 05 May 2026
 
Units  | Per unit  | Per Tape*  | 
|---|---|---|
| 5 - 45 | £0.808 | £4.04 | 
| 50 - 245 | £0.686 | £3.43 | 
| 250 - 495 | £0.566 | £2.83 | 
| 500 - 1245 | £0.532 | £2.66 | 
| 1250 + | £0.50 | £2.50 | 
*price indicative
- RS Stock No.:
 - 787-9373
 - Mfr. Part No.:
 - SIRA06DP-T1-GE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK SO-8 | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 62.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +20 V | |
| Width | 5.26mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 51 nC @ 10 V | |
| Length | 6.25mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.12mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 40 A  | ||
Maximum Drain Source Voltage 30 V  | ||
Package Type PowerPAK SO-8  | ||
Series TrenchFET  | ||
Mounting Type Surface Mount  | ||
Pin Count 8  | ||
Maximum Drain Source Resistance 3.5 mΩ  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 1.1V  | ||
Maximum Power Dissipation 62.5 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -16 V, +20 V  | ||
Width 5.26mm  | ||
Transistor Material Si  | ||
Number of Elements per Chip 1  | ||
Maximum Operating Temperature +150 °C  | ||
Typical Gate Charge @ Vgs 51 nC @ 10 V  | ||
Length 6.25mm  | ||
Minimum Operating Temperature -55 °C  | ||
Height 1.12mm  | ||
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
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