Vishay D Series N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB SIHP6N40D-GE3
- RS Stock No.:
 - 787-9187
 - Mfr. Part No.:
 - SIHP6N40D-GE3
 - Brand:
 - Vishay
 
Subtotal (1 pack of 5 units)*
£4.63
(exc. VAT)
£5.555
(inc. VAT)
FREE delivery for orders over £50.00
- Final 295 unit(s), ready to ship
 
Units  | Per unit  | Per Pack*  | 
|---|---|---|
| 5 - 45 | £0.926 | £4.63 | 
| 50 - 245 | £0.908 | £4.54 | 
| 250 - 495 | £0.694 | £3.47 | 
| 500 - 1245 | £0.65 | £3.25 | 
| 1250 + | £0.558 | £2.79 | 
*price indicative
- RS Stock No.:
 - 787-9187
 - Mfr. Part No.:
 - SIHP6N40D-GE3
 - Brand:
 - Vishay
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 400 V | |
| Package Type | TO-220AB | |
| Series | D Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 10.51mm | |
| Width | 4.65mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 9 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type N  | ||
Maximum Continuous Drain Current 6 A  | ||
Maximum Drain Source Voltage 400 V  | ||
Package Type TO-220AB  | ||
Series D Series  | ||
Mounting Type Through Hole  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 1 Ω  | ||
Channel Mode Enhancement  | ||
Minimum Gate Threshold Voltage 3V  | ||
Maximum Power Dissipation 104 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage -30 V, +30 V  | ||
Maximum Operating Temperature +150 °C  | ||
Transistor Material Si  | ||
Length 10.51mm  | ||
Width 4.65mm  | ||
Number of Elements per Chip 1  | ||
Typical Gate Charge @ Vgs 9 nC @ 10 V  | ||
Minimum Operating Temperature -55 °C  | ||
Height 9.01mm  | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
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