Vishay TrenchFET N-Channel MOSFET, 36 A, 40 V, 8-Pin SOIC SI4154DY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£1,310.00

(exc. VAT)

£1,572.50

(inc. VAT)

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2500 +£0.524£1,310.00

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RS Stock No.:
180-7284
Mfr. Part No.:
SI4154DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0039 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET

Applications


• POL
• Synchronous rectifier

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21

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