Vishay Siliconix TrenchFET Dual N-Channel MOSFET, 30 A, 30 V, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3
- RS Stock No.:
- 178-3932
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Brand:
- Vishay Siliconix
Subtotal (1 pack of 10 units)*
£5.99
(exc. VAT)
£7.19
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 3,860 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £0.599 | £5.99 |
*price indicative
- RS Stock No.:
- 178-3932
- Mfr. Part No.:
- SiZ348DT-T1-GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 3 x 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 10 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 2.4V | |
| Maximum Power Dissipation | 16.7 W | |
| Maximum Gate Source Voltage | -16 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 12.1 nC @ 10 V | |
| Length | 3mm | |
| Width | 3mm | |
| Number of Elements per Chip | 2 | |
| Forward Diode Voltage | 1.2V | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 30 V | ||
Series TrenchFET | ||
Package Type PowerPAIR 3 x 3 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 10 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 2.4V | ||
Maximum Power Dissipation 16.7 W | ||
Maximum Gate Source Voltage -16 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 12.1 nC @ 10 V | ||
Length 3mm | ||
Width 3mm | ||
Number of Elements per Chip 2 | ||
Forward Diode Voltage 1.2V | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
- COO (Country of Origin):
- TW
TrenchFET® Gen IV power MOSFET
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
High side and low side MOSFETs form optimized combination for 50 % duty cycle
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching
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