Vishay Siliconix TrenchFET P-Channel MOSFET, 16 A, 80 V, 4-Pin PowerPAK SO-8L SQJ481EP-T1_GE3
- RS Stock No.:
- 178-3719
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Brand:
- Vishay Siliconix
Subtotal (1 reel of 3000 units)*
£1,005.00
(exc. VAT)
£1,206.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 9,000 unit(s) ready to ship
- Plus 999,990,000 unit(s) shipping from 12 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.335 | £1,005.00 |
*price indicative
- RS Stock No.:
- 178-3719
- Mfr. Part No.:
- SQJ481EP-T1_GE3
- Brand:
- Vishay Siliconix
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAK SO-8L | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 5.99mm | |
| Typical Gate Charge @ Vgs | 33 nC @ 10 V | |
| Width | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.07mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Channel Type P | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK SO-8L | ||
Series TrenchFET | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 5.99mm | ||
Typical Gate Charge @ Vgs 33 nC @ 10 V | ||
Width 5mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Height 1.07mm | ||
Minimum Operating Temperature -55 °C | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of20V. It has drain-source resistance of 80mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 45W and continuous drain current of 16A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Related links
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