Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
- RS Stock No.:
 - 178-3716
 - Mfr. Part No.:
 - SQD40061EL_GE3
 - Brand:
 - Vishay Siliconix
 
Subtotal (1 reel of 2000 units)*
£1,178.00
(exc. VAT)
£1,414.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 27 May 2026
 
Units  | Per unit  | Per Reel*  | 
|---|---|---|
| 2000 + | £0.589 | £1,178.00 | 
*price indicative
- RS Stock No.:
 - 178-3716
 - Mfr. Part No.:
 - SQD40061EL_GE3
 - Brand:
 - Vishay Siliconix
 
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay Siliconix | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Series | TrenchFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 2.38mm | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 6.22mm | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix  | ||
Channel Type P  | ||
Maximum Continuous Drain Current 100 A  | ||
Maximum Drain Source Voltage 40 V  | ||
Package Type DPAK (TO-252)  | ||
Series TrenchFET  | ||
Mounting Type Surface Mount  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 9 mΩ  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 2.5V  | ||
Minimum Gate Threshold Voltage 1.5V  | ||
Maximum Power Dissipation 107 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage ±20 V  | ||
Width 2.38mm  | ||
Length 6.73mm  | ||
Typical Gate Charge @ Vgs 185 nC @ 10 V  | ||
Number of Elements per Chip 1  | ||
Transistor Material Si  | ||
Maximum Operating Temperature +175 °C  | ||
Forward Diode Voltage 1.5V  | ||
Minimum Operating Temperature -55 °C  | ||
Height 6.22mm  | ||
RoHS Status: Exempt
- COO (Country of Origin):
 - TW
 
Package with low thermal resistance
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